Characterizing luminescent properties of SiC materials

In this paper, there are three optical measurement methods, photoluminescence, cathodoluminescence and ion-excited luminescence, are introduced based on the characterization methods of luminescence properties of SiC materials. Different luminescence characterization techniques are applicable for studying different quality characteristics, among which photoluminescence is a non-destructive test, cathodoluminescence has better measurement efficiency on dislocation defects of SiC epitaxial layer, ion excitation luminescence can detect the in-situ information of defect luminescence; the change of luminescence is related to the defect center in the material, so optical measurement can well reflect the interior features of the material. The luminescence properties of SiC materials were studied by different optical measurement methods, which laid an important foundation for better expanding the application of SiC luminescence.