YAN Liangxing TIAN Qiang. VARIATION OF EFFECT OF POLARON IN GAAS FILM DEPOSITED ON ALxGA1-xAs SUBSTRATE WITH ALUMINUM CONCENTRATION[J]. Journal of Beijing Normal University(Natural Science), 2014, 50(1): 20.
Citation: YAN Liangxing TIAN Qiang. VARIATION OF EFFECT OF POLARON IN GAAS FILM DEPOSITED ON ALxGA1-xAs SUBSTRATE WITH ALUMINUM CONCENTRATION[J]. Journal of Beijing Normal University(Natural Science), 2014, 50(1): 20.
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VARIATION OF EFFECT OF POLARON IN GAAS FILM DEPOSITED ON ALxGA1-xAs SUBSTRATE WITH ALUMINUM CONCENTRATION

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  • The deposition of Polaronin GaAsfilm on AlxGa1-x substrate was studied in this paper. A framework for fractal dimension approximation Aluminum concentration, polaron binding energy and monotonic shift in AlxGa1-x substrates With the increase of aluminum concentration, the aluminum concentration on Al xAlGa1-xSi substrate increases. The polarization properties of GaAsGaN thin films are different, and the thickness of GaAsSe films is also different. Effect of aluminum concentration on extremely thin AAS films
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